SIHA24N80AE-GE3 VISHAY
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 51A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Pulsed drain current: 51A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 25+ | 2.92 EUR |
| 26+ | 2.76 EUR |
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Technische Details SIHA24N80AE-GE3 VISHAY
Description: MOSFET N-CH 800V 9A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V.
Weitere Produktangebote SIHA24N80AE-GE3 nach Preis ab 2.73 EUR bis 7.16 EUR
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SIHA24N80AE-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 800V 9A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V |
auf Bestellung 467 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA24N80AE-GE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 800V E Series Pwr MOSFET |
auf Bestellung 682 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIHA24N80AE-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
Description: MOSFET N-CH 800V 9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 184mOhm @ 10A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1836 pF @ 100 V
auf Bestellung 467 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.56 EUR |
| 50+ | 3.38 EUR |
| 100+ | 3.07 EUR |
| SIHA24N80AE-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
MOSFETs N-CHANNEL 800V E Series Pwr MOSFET
auf Bestellung 682 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.16 EUR |
| 10+ | 3.7 EUR |
| 100+ | 3.34 EUR |
| 500+ | 3.1 EUR |
| 1000+ | 2.73 EUR |