SIHB065N60E-GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 1+ | 10.84 EUR |
| 10+ | 7.92 EUR |
| 100+ | 7.52 EUR |
| 500+ | 5.79 EUR |
| 1000+ | 4.17 EUR |
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Technische Details SIHB065N60E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 40A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V.
Weitere Produktangebote SIHB065N60E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHB065N60E-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 600V 40A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHB065N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 250W Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 74nC On-state resistance: 65mΩ Gate-source voltage: ±30V Drain current: 25A Pulsed drain current: 116A Drain-source voltage: 600V Power dissipation: 250W Case: D2PAK; TO263 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHB065N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 40A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Description: MOSFET N-CH 600V 40A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SIHB065N60E-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 250W
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 65mΩ
Gate-source voltage: ±30V
Drain current: 25A
Pulsed drain current: 116A
Drain-source voltage: 600V
Power dissipation: 250W
Case: D2PAK; TO263
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 250W
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 65mΩ
Gate-source voltage: ±30V
Drain current: 25A
Pulsed drain current: 116A
Drain-source voltage: 600V
Power dissipation: 250W
Case: D2PAK; TO263
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH