SIHB085N60EF-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 17A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.5 EUR |
| 10+ | 5.74 EUR |
| 100+ | 4.28 EUR |
| 500+ | 4.17 EUR |
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Technische Details SIHB085N60EF-GE3 Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 84mOhm @ 17A, 10V, Power Dissipation (Max): 184W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2733 pF @ 100 V.
Weitere Produktangebote SIHB085N60EF-GE3 nach Preis ab 4.47 EUR bis 8.73 EUR
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SIHB085N60EF-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 600Vds 30V Vgs TO-263 |
auf Bestellung 653 Stücke: Lieferzeit 10-14 Tag (e) |
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