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SIHB100N65E-GE3

SIHB100N65E-GE3 Vishay Siliconix

sihb100n65e.pdf Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET 650 V (D-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.60 EUR
10+10.55 EUR
25+9.79 EUR
100+8.95 EUR
250+8.55 EUR
500+8.31 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIHB100N65E-GE3 Vishay Siliconix

Description: E SERIES POWER MOSFET 650 V (D-, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V.

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SIHB100N65E-GE3 SIHB100N65E-GE3 Hersteller : Vishay sihb100n65e.pdf MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V
auf Bestellung 776 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+14.57 EUR
10+12.50 EUR
25+11.33 EUR
100+10.42 EUR
250+9.80 EUR
500+9.19 EUR
1000+8.25 EUR
Im Einkaufswagen  Stück im Wert von  UAH