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SIHB150N60E-GE3

SIHB150N60E-GE3 Vishay / Siliconix

sihb150n60e.pdf Hersteller: Vishay / Siliconix
MOSFET E Series Power MOSFET D2PAK (TO-263), 158 mohm a. 10V
auf Bestellung 1906 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6 EUR
10+ 5.05 EUR
25+ 4.77 EUR
100+ 4.1 EUR
250+ 3.85 EUR
500+ 3.64 EUR
1000+ 3.08 EUR
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Technische Details SIHB150N60E-GE3 Vishay / Siliconix

Description: E SERIES POWER MOSFET D2PAK (TO-, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V.

Weitere Produktangebote SIHB150N60E-GE3 nach Preis ab 3.65 EUR bis 6.05 EUR

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Preis ohne MwSt
SIHB150N60E-GE3 SIHB150N60E-GE3 Hersteller : Vishay Siliconix sihb150n60e.pdf Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.05 EUR
10+ 5.08 EUR
100+ 4.11 EUR
500+ 3.65 EUR
Mindestbestellmenge: 3
SIHB150N60E-GE3 SIHB150N60E-GE3 Hersteller : Vishay Siliconix sihb150n60e.pdf Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 158mOhm @ 10A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1514 pF @ 100 V
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