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SIHB190N65E-GE3

SIHB190N65E-GE3 Vishay Siliconix

sihb190n65e.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 100 V
auf Bestellung 992 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.16 EUR
10+3.87 EUR
25+3.55 EUR
100+3.2 EUR
250+3.03 EUR
500+2.93 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIHB190N65E-GE3 Vishay Siliconix

Description: N-CHANNEL 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Supplier Device Package: TO-263 (D2Pak), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 100 V.

Weitere Produktangebote SIHB190N65E-GE3 nach Preis ab 2.62 EUR bis 7.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SIHB190N65E-GE3 SIHB190N65E-GE3 Hersteller : Vishay sihb190n65e.pdf MOSFETs N-CHANNEL 650V
auf Bestellung 917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.06 EUR
10+4.68 EUR
100+3.66 EUR
500+3.27 EUR
1000+2.78 EUR
2000+2.66 EUR
5000+2.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHB190N65E-GE3 SIHB190N65E-GE3 Hersteller : Vishay Siliconix sihb190n65e.pdf Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH