SIHB22N60E-GE3 VISHAY
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details SIHB22N60E-GE3 VISHAY
Description: MOSFET N-CH 600V 21A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Power Dissipation (Max): 227W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 100 V.
Weitere Produktangebote SIHB22N60E-GE3 nach Preis ab 3.26 EUR bis 9.03 EUR
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SIHB22N60E-GE3 | Vishay Semiconductors |
MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) |
auf Bestellung 2464 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHB22N60E-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 2464 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.03 EUR |
| 10+ | 5.91 EUR |
| 100+ | 4.42 EUR |
| 500+ | 3.71 EUR |
| 1000+ | 3.43 EUR |
| 2000+ | 3.31 EUR |
| 5000+ | 3.26 EUR |