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SIHB24N65EFT1-GE3

SIHB24N65EFT1-GE3 Vishay Siliconix

sihb24n65ef.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+5.67 EUR
1600+ 4.86 EUR
Mindestbestellmenge: 800
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Technische Details SIHB24N65EFT1-GE3 Vishay Siliconix

Description: N-CHANNEL 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V.

Weitere Produktangebote SIHB24N65EFT1-GE3 nach Preis ab 6.38 EUR bis 13.99 EUR

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SIHB24N65EFT1-GE3 SIHB24N65EFT1-GE3 Hersteller : Vishay Siliconix sihb24n65ef.pdf Description: N-CHANNEL 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 156mOhm @ 12A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2774 pF @ 100 V
auf Bestellung 2734 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.4 EUR
10+ 7.89 EUR
100+ 6.38 EUR
Mindestbestellmenge: 2
SIHB24N65EFT1-GE3 SIHB24N65EFT1-GE3 Hersteller : Vishay / Siliconix sihb24n65ef.pdf MOSFET N-CHANNEL 650V
auf Bestellung 3981 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+13.99 EUR
10+ 11.75 EUR
25+ 11.1 EUR
100+ 9.59 EUR
800+ 8.14 EUR
Mindestbestellmenge: 4
SIHB24N65EFT1-GE3 Hersteller : Vishay sihb24n65ef.pdf E Series Power MOSFET with Fast Body Diode
Produkt ist nicht verfügbar
SIHB24N65EFT1-GE3 Hersteller : VISHAY sihb24n65ef.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
SIHB24N65EFT1-GE3 Hersteller : VISHAY sihb24n65ef.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar