SIHB33N60EF-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 33A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V
auf Bestellung 1003 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.14 EUR |
| 10+ | 8.07 EUR |
| 100+ | 5.90 EUR |
| 500+ | 5.07 EUR |
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Technische Details SIHB33N60EF-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 33A D2PAK, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 33A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 16.5A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3454 pF @ 100 V.
Weitere Produktangebote SIHB33N60EF-GE3 nach Preis ab 6.21 EUR bis 12.57 EUR
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SIHB33N60EF-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 600V Vds 30V Vgs D2PAK (TO-263) |
auf Bestellung 287 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHB33N60EF-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| SIHB33N60EF-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 100A; 278W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 100A Case: D2PAK; TO263 On-state resistance: 98mΩ Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±30V Power dissipation: 278W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHB33N60EF-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 100A; 278W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 100A Case: D2PAK; TO263 On-state resistance: 98mΩ Mounting: SMD Gate charge: 155nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±30V Power dissipation: 278W |
Produkt ist nicht verfügbar |