SIHB6N80E-GE3 Vishay / Siliconix
auf Bestellung 984 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.82 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.68 EUR |
| 250+ | 2.34 EUR |
| 500+ | 2.24 EUR |
| 1000+ | 1.95 EUR |
| 2000+ | 1.94 EUR |
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Technische Details SIHB6N80E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 800V 5.4A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V.
Weitere Produktangebote SIHB6N80E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| SIHB6N80E-GE3 | Hersteller : Vishay |
 E Series Power MOSFET |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SIHB6N80E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.4A; Idm: 15A; 78W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.4A Pulsed drain current: 15A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHB6N80E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 5.4A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SIHB6N80E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 5.4A; Idm: 15A; 78W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5.4A Pulsed drain current: 15A Power dissipation: 78W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 940mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |