SIHB6N80E-GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 1+ | 7.92 EUR |
| 10+ | 6.07 EUR |
| 100+ | 5.95 EUR |
| 500+ | 5.91 EUR |
| 1000+ | 1.85 EUR |
| 2000+ | 1.81 EUR |
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Technische Details SIHB6N80E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 800V 5.4A D2PAK, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 78W (Tc), Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.
Weitere Produktangebote SIHB6N80E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHB6N80E-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 800V 5.4A D2PAKSupplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 78W (Tc) Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHB6N80E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 5.4A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 800V 5.4A D2PAK
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 827 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH