Technische Details SIHB8N50D-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 500V, Drain current: 5.5A, Pulsed drain current: 18A, Power dissipation: 156W, Case: D2PAK; TO263, Gate-source voltage: ±30V, On-state resistance: 0.85Ω, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHB8N50D-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHB8N50D-GE3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHB8N50D-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 500V 8.7A D2PAK |
Produkt ist nicht verfügbar |
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SIHB8N50D-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 500V Vds 30V Vgs D2PAK (TO-263) |
Produkt ist nicht verfügbar |
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| SIHB8N50D-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |