SiHD14N60E-GE3 Vishay / Siliconix
auf Bestellung 11494 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.36 EUR |
| 10+ | 1.85 EUR |
| 100+ | 1.72 EUR |
| 500+ | 1.66 EUR |
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Technische Details SiHD14N60E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 13A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V, Power Dissipation (Max): 147W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V.
Weitere Produktangebote SiHD14N60E-GE3 nach Preis ab 1.66 EUR bis 4.59 EUR
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SiHD14N60E-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 13A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 309mOhm @ 7A, 10V Power Dissipation (Max): 147W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 100 V |
auf Bestellung 1035 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHD14N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK |
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| SiHD14N60E-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 32A; 147W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 147W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 309mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 32A Gate charge: 64nC |
Produkt ist nicht verfügbar |