SIHD186N60EFT4-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 156W (Tc)
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Technische Details SIHD186N60EFT4-GE3 Vishay Siliconix
Description: N-CHANNEL 600V, Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 156W (Tc).