SIHD2N80AE-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 800V 2.9A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V
auf Bestellung 1579 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.62 EUR |
| 11+ | 1.66 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.88 EUR |
| 1000+ | 0.8 EUR |
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Technische Details SIHD2N80AE-GE3 Vishay Siliconix
Description: MOSFET N-CH 800V 2.9A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc), Rds On (Max) @ Id, Vgs: 2.9Ohm @ 500mA, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 100 V.
Weitere Produktangebote SIHD2N80AE-GE3 nach Preis ab 0.78 EUR bis 23.84 EUR
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SIHD2N80AE-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs Nch 800V Vds 30V Vgs TO-252 (DPAK) |
auf Bestellung 4827 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHD2N80AE-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; ESD Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 10.5nC On-state resistance: 2.5Ω Drain current: 1.8A Pulsed drain current: 3.6A Power dissipation: 62.5W Gate-source voltage: ±30V Drain-source voltage: 800V Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHD2N80AE-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 3.6A; 62.5W; ESD Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Gate charge: 10.5nC On-state resistance: 2.5Ω Drain current: 1.8A Pulsed drain current: 3.6A Power dissipation: 62.5W Gate-source voltage: ±30V Drain-source voltage: 800V Kind of channel: enhancement Version: ESD Type of transistor: N-MOSFET Polarisation: unipolar |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHD2N80AE-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 800V 2.9A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |