SIHD5N80AE-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: E SERIES POWER MOSFET DPAK (TO-2
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V
auf Bestellung 3522 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.69 EUR |
| 13+ | 1.38 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.74 EUR |
| 3000+ | 0.7 EUR |
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Technische Details SIHD5N80AE-GE3 Vishay Siliconix
Description: E SERIES POWER MOSFET DPAK (TO-2, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 1.35Ohm @ 1.5A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 100 V.
Weitere Produktangebote SIHD5N80AE-GE3 nach Preis ab 1.71 EUR bis 2.39 EUR
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SIHD5N80AE-GE3 | Hersteller : Vishay / Siliconix |
MOSFET DPAK |
auf Bestellung 3690 Stücke: Lieferzeit 14-28 Tag (e) |
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