SIHD6N62E-GE3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 1+ | 3.41 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.07 EUR |
| 3000+ | 0.93 EUR |
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Technische Details SIHD6N62E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 620V 6A DPAK, Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 78W (Tc).
Weitere Produktangebote SIHD6N62E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SIHD6N62E-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 620V 6A DPAKRds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 78W (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHD6N62E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 620V 6A DPAK
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Description: MOSFET N-CH 620V 6A DPAK
Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 78W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH