SIHD6N62E-GE3 Vishay Semiconductors
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.57 EUR |
| 10+ | 2.11 EUR |
| 100+ | 1.08 EUR |
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Technische Details SIHD6N62E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 620V 6A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V.
Weitere Produktangebote SIHD6N62E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| SIHD6N62E-GE3 | Hersteller : VISHAY |
 SIHD6N62E-GE3 SMD N channel transistors |
Produkt ist nicht verfügbar |
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SIHD6N62E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 620V 6A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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| SIHD6N62E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 620V 6A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 578 pF @ 100 V |
Produkt ist nicht verfügbar |