SIHF12N65E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 650V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V
auf Bestellung 995 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 5.9 EUR |
| 50+ | 4.74 EUR |
| 100+ | 3.9 EUR |
| 500+ | 3.3 EUR |
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Technische Details SIHF12N65E-GE3 Vishay Siliconix
Description: MOSFET N-CH 650V 12A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V.
Weitere Produktangebote SIHF12N65E-GE3 nach Preis ab 2.59 EUR bis 5.95 EUR
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SIHF12N65E-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 650V Vds 30V Vgs TO-220 FULLPAK |
auf Bestellung 894 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHF12N65E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Full-Pak |
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SIHF12N65E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Full-Pak |
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| SIHF12N65E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Pulsed drain current: 28A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHF12N65E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Pulsed drain current: 28A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |