SIHF12N65E-GE3 Vishay / Siliconix
auf Bestellung 791 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.66 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.83 EUR |
| 1000+ | 1.68 EUR |
| 2000+ | 1.62 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHF12N65E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 650V 12A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V.
Weitere Produktangebote SIHF12N65E-GE3 nach Preis ab 1.83 EUR bis 4.96 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIHF12N65E-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 650V 12A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1224 pF @ 100 V |
auf Bestellung 881 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
SIHF12N65E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Full-Pak |
Produkt ist nicht verfügbar |
|||||||||||
 |
SIHF12N65E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Full-Pak |
Produkt ist nicht verfügbar |
|||||||||||
| SIHF12N65E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
Produkt ist nicht verfügbar |