SIHF30N60E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 29A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V
Power Dissipation (Max): 37W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.56 EUR |
| 10+ | 7.07 EUR |
| 100+ | 5.13 EUR |
| 500+ | 4.31 EUR |
| 1000+ | 4.26 EUR |
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Technische Details SIHF30N60E-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 29A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V.
Weitere Produktangebote SIHF30N60E-GE3 nach Preis ab 5.09 EUR bis 10.14 EUR
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SIHF30N60E-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK |
auf Bestellung 1035 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHF30N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP |
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SIHF30N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP |
Produkt ist nicht verfügbar |
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SIHF30N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 676A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 37W Gate charge: 130nC Pulsed drain current: 676A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHF30N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 676A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 37W Gate charge: 130nC Pulsed drain current: 676A |
Produkt ist nicht verfügbar |