SIHF30N60E-GE3 Vishay Semiconductors
auf Bestellung 1033 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.29 EUR |
| 10+ | 6.92 EUR |
| 100+ | 5.09 EUR |
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Technische Details SIHF30N60E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 600V 29A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V.
Weitere Produktangebote SIHF30N60E-GE3 nach Preis ab 4.16 EUR bis 9.29 EUR
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SIHF30N60E-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 600V 29A TO220Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 15A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V |
auf Bestellung 2575 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHF30N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP |
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SIHF30N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP |
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SIHF30N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 676A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 37W Pulsed drain current: 676A Gate charge: 130nC Anzahl je Verpackung: 1 Stücke |
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SIHF30N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; Idm: 676A; 37W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 37W Pulsed drain current: 676A Gate charge: 130nC |
Produkt ist nicht verfügbar |