SIHF35N60E-GE3 Vishay
Hersteller: VishaySIHF35N60E-GE3 Vishay MOSFETs Transistor N-CH 600V 32A 3-Pin(3+Tab) TO-220FP - Arrow.com
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHF35N60E-GE3 Vishay
Description: MOSFET N-CHANNEL 600V 32A TO220, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Tc), Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V, Power Dissipation (Max): 39W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220 Full Pack, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V.
Weitere Produktangebote SIHF35N60E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SIHF35N60E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CHANNEL 600V 32A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 17A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2760 pF @ 100 V |
Produkt ist nicht verfügbar |
|
 |
SIHF35N60E-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK |
Produkt ist nicht verfügbar |