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SIHF530STRL-GE3

SIHF530STRL-GE3 Vishay Siliconix

sihf530s.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.06 EUR
13+1.38 EUR
100+0.97 EUR
Mindestbestellmenge: 9
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Technische Details SIHF530STRL-GE3 Vishay Siliconix

Description: MOSFET N-CH 100V 14A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V, Power Dissipation (Max): 3.7W (Ta), 88W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V.

Weitere Produktangebote SIHF530STRL-GE3 nach Preis ab 0.66 EUR bis 2.57 EUR

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SIHF530STRL-GE3 SIHF530STRL-GE3 Hersteller : Vishay / Siliconix sihf530s.pdf MOSFETs 100V Vds 20V Vgs TO-220AB
auf Bestellung 702 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.57 EUR
10+1.67 EUR
100+1.10 EUR
500+1.06 EUR
800+0.73 EUR
2400+0.68 EUR
4800+0.66 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHF530STRL-GE3 SIHF530STRL-GE3 Hersteller : Vishay sihf530s.pdf Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R
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SIHF530STRL-GE3 SIHF530STRL-GE3 Hersteller : Vishay sihf530s.pdf Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) D2PAK T/R
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SIHF530STRL-GE3 Hersteller : VISHAY sihf530s.pdf SIHF530STRL-GE3 SMD N channel transistors
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Im Einkaufswagen  Stück im Wert von  UAH
SIHF530STRL-GE3 SIHF530STRL-GE3 Hersteller : Vishay Siliconix sihf530s.pdf Description: MOSFET N-CH 100V 14A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH