SIHF540S-GE3 Vishay / Siliconix
auf Bestellung 376 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.52 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.11 EUR |
| 2000+ | 1.09 EUR |
| 5000+ | 1.03 EUR |
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Technische Details SIHF540S-GE3 Vishay / Siliconix
Description: MOSFET N-CH 100V 28A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V, Power Dissipation (Max): 3.7W (Ta), 150W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V.
Weitere Produktangebote SIHF540S-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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SIHF540S-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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SIHF540S-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 28A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| SIHF540S-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W Kind of channel: enhancement Pulsed drain current: 110A Gate-source voltage: ±20V Power dissipation: 150W Drain-source voltage: 100V Kind of package: reel; tape Case: D2PAK; TO263 Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 72nC On-state resistance: 77mΩ Drain current: 20A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHF540S-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 28A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V Power Dissipation (Max): 3.7W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V |
Produkt ist nicht verfügbar |
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| SIHF540S-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W Kind of channel: enhancement Pulsed drain current: 110A Gate-source voltage: ±20V Power dissipation: 150W Drain-source voltage: 100V Kind of package: reel; tape Case: D2PAK; TO263 Mounting: SMD Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 72nC On-state resistance: 77mΩ Drain current: 20A |
Produkt ist nicht verfügbar |