Technische Details SIHF634STRR-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W, Mounting: SMD, Gate charge: 41nC, On-state resistance: 0.45Ω, Drain current: 5.1A, Gate-source voltage: ±20V, Pulsed drain current: 32A, Power dissipation: 74W, Drain-source voltage: 250V, Case: D2PAK; TO263, Kind of channel: enhancement, Type of transistor: N-MOSFET, Kind of package: reel; tape, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHF634STRR-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHF634STRR-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W Mounting: SMD Gate charge: 41nC On-state resistance: 0.45Ω Drain current: 5.1A Gate-source voltage: ±20V Pulsed drain current: 32A Power dissipation: 74W Drain-source voltage: 250V Case: D2PAK; TO263 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHF634STRR-GE3 | Hersteller : Vishay / Siliconix | MOSFET |
Produkt ist nicht verfügbar |
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| SIHF634STRR-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 5.1A; Idm: 32A; 74W Mounting: SMD Gate charge: 41nC On-state resistance: 0.45Ω Drain current: 5.1A Gate-source voltage: ±20V Pulsed drain current: 32A Power dissipation: 74W Drain-source voltage: 250V Case: D2PAK; TO263 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar |
Produkt ist nicht verfügbar |