SIHF740AL-GE3 VISHAY

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W, Case: I2PAK; TO262, Mounting: THT, Kind of package: tube, Power dissipation: 125W, Polarisation: unipolar, Gate charge: 36nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 40A, Drain-source voltage: 400V, Drain current: 6.3A, On-state resistance: 0.55Ω, Type of transistor: N-MOSFET, Anzahl je Verpackung: 1 Stücke.