| Anzahl | Privatkunde |
|---|---|
| 129+ | 1.38 EUR |
| 144+ | 1.23 EUR |
| 500+ | 1.13 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
129 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHF9530S-GE3 Vishay
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W, Mounting: SMD, Pulsed drain current: -48A, Power dissipation: 88W, Gate charge: 38nC, Polarisation: unipolar, Drain current: -8.2A, Kind of channel: enhancement, Drain-source voltage: -100V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, Case: D2PAK; TO263, On-state resistance: 0.3Ω.
Weitere Produktangebote SIHF9530S-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SIHF9530S-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Mounting: SMD Pulsed drain current: -48A Power dissipation: 88W Gate charge: 38nC Polarisation: unipolar Drain current: -8.2A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK; TO263 On-state resistance: 0.3Ω |
auf Bestellung 863 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SIHF9530S-GE3 |
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Mounting: SMD
Pulsed drain current: -48A
Power dissipation: 88W
Gate charge: 38nC
Polarisation: unipolar
Drain current: -8.2A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; TO263
On-state resistance: 0.3Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Mounting: SMD
Pulsed drain current: -48A
Power dissipation: 88W
Gate charge: 38nC
Polarisation: unipolar
Drain current: -8.2A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; TO263
On-state resistance: 0.3Ω
auf Bestellung 863 Stücke:
Lieferzeit 14-21 Tag (e)