
SIHF9530S-GE3 VISHAY
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Polarisation: unipolar
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -100V
Pulsed drain current: -48A
Drain current: -8.2A
Gate charge: 38nC
On-state resistance: 0.3Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W
Polarisation: unipolar
Case: D2PAK; TO263
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -100V
Pulsed drain current: -48A
Drain current: -8.2A
Gate charge: 38nC
On-state resistance: 0.3Ω
Power dissipation: 88W
Gate-source voltage: ±20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 938 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis |
---|---|
72+ | 1 EUR |
86+ | 0.84 EUR |
97+ | 0.74 EUR |
112+ | 0.64 EUR |
117+ | 0.61 EUR |
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Technische Details SIHF9530S-GE3 VISHAY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W, Polarisation: unipolar, Case: D2PAK; TO263, Kind of channel: enhancement, Mounting: SMD, Type of transistor: P-MOSFET, Kind of package: reel; tape, Drain-source voltage: -100V, Pulsed drain current: -48A, Drain current: -8.2A, Gate charge: 38nC, On-state resistance: 0.3Ω, Power dissipation: 88W, Gate-source voltage: ±20V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHF9530S-GE3 nach Preis ab 0.61 EUR bis 1 EUR
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SIHF9530S-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -8.2A; Idm: -48A; 88W Polarisation: unipolar Case: D2PAK; TO263 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape Drain-source voltage: -100V Pulsed drain current: -48A Drain current: -8.2A Gate charge: 38nC On-state resistance: 0.3Ω Power dissipation: 88W Gate-source voltage: ±20V |
auf Bestellung 938 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHF9530S-GE3 | Hersteller : Vishay |
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SIHF9530S-GE3 | Hersteller : Vishay Semiconductors | MOSFETs MOSFET P-CHANNEL 100V |
Produkt ist nicht verfügbar |