Produkte > VISHAY SILICONIX > SIHFBC40AS-GE3
SIHFBC40AS-GE3

SIHFBC40AS-GE3 Vishay Siliconix

sihfbc40.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 600V
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V
auf Bestellung 983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.23 EUR
100+1.58 EUR
500+1.3 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SIHFBC40AS-GE3 Vishay Siliconix

Description: MOSFET N-CHANNEL 600V, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.7A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1036 pF @ 25 V.

Weitere Produktangebote SIHFBC40AS-GE3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SIHFBC40AS-GE3 SIHFBC40AS-GE3 Hersteller : Vishay sihfbc40.pdf Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH