Produkte > VISHAY > SIHFBF20L-GE3

SIHFBF20L-GE3 VISHAY

Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.1A
Pulsed drain current: 6.8A
Power dissipation: 54W
Case: I2PAK; TO262
Gate-source voltage: ±20V
On-state resistance: 8Ω
Mounting: THT
Gate charge: 38nC
Kind of channel: enhancement

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Technische Details SIHFBF20L-GE3 VISHAY

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 1.1A, Pulsed drain current: 6.8A, Power dissipation: 54W, Case: I2PAK; TO262, Gate-source voltage: ±20V, On-state resistance: 8Ω, Mounting: THT, Gate charge: 38nC, Kind of channel: enhancement.