Technische Details SIHFBF20L-GE3 Vishay / BC Components
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W, Mounting: THT, Gate charge: 38nC, Polarisation: unipolar, Drain current: 1.1A, Kind of channel: enhancement, Drain-source voltage: 900V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Case: I2PAK; TO262, On-state resistance: 8Ω, Pulsed drain current: 6.8A, Power dissipation: 54W.
Weitere Produktangebote SIHFBF20L-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SIHFBF20L-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W Mounting: THT Gate charge: 38nC Polarisation: unipolar Drain current: 1.1A Kind of channel: enhancement Drain-source voltage: 900V Type of transistor: N-MOSFET Gate-source voltage: ±20V Case: I2PAK; TO262 On-state resistance: 8Ω Pulsed drain current: 6.8A Power dissipation: 54W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIHFBF20L-GE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Mounting: THT
Gate charge: 38nC
Polarisation: unipolar
Drain current: 1.1A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: I2PAK; TO262
On-state resistance: 8Ω
Pulsed drain current: 6.8A
Power dissipation: 54W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.1A; Idm: 6.8A; 54W
Mounting: THT
Gate charge: 38nC
Polarisation: unipolar
Drain current: 1.1A
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: I2PAK; TO262
On-state resistance: 8Ω
Pulsed drain current: 6.8A
Power dissipation: 54W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH