| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.02 EUR |
| 10+ | 3.25 EUR |
| 100+ | 2.23 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.67 EUR |
| 2000+ | 1.62 EUR |
| 5000+ | 1.58 EUR |
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Technische Details SIHFBF30S-GE3 Vishay / Siliconix
Description: MOSFET N-CHANNEL 900V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), FET Type: N-Channel, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote SIHFBF30S-GE3 nach Preis ab 1.82 EUR bis 5.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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SIHFBF30S-GE3 | Vishay Siliconix |
 Description: MOSFET N-CHANNEL 900VPackaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
auf Bestellung 923 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIHFBF30S-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 900V
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description: MOSFET N-CHANNEL 900V
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
auf Bestellung 923 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.11 EUR |
| 10+ | 3.3 EUR |
| 100+ | 2.26 EUR |
| 500+ | 1.82 EUR |