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SIHFBF30S-GE3

SIHFBF30S-GE3 Vishay / Siliconix

sihbf30s.pdf Hersteller: Vishay / Siliconix
MOSFETs TO263 900V 3.6A N-CH MOSFET
auf Bestellung 930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.22 EUR
10+2.38 EUR
100+1.70 EUR
500+1.51 EUR
2000+1.49 EUR
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Technische Details SIHFBF30S-GE3 Vishay / Siliconix

Description: MOSFET N-CHANNEL 900V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.

Weitere Produktangebote SIHFBF30S-GE3 nach Preis ab 1.43 EUR bis 3.27 EUR

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SIHFBF30S-GE3 SIHFBF30S-GE3 Hersteller : Vishay Siliconix sihbf30s.pdf Description: MOSFET N-CHANNEL 900V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.27 EUR
10+2.37 EUR
100+1.78 EUR
500+1.43 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
SIHFBF30S-GE3 Hersteller : VISHAY sihbf30s.pdf SIHFBF30S-GE3 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHFBF30S-GE3 SIHFBF30S-GE3 Hersteller : Vishay Siliconix sihbf30s.pdf Description: MOSFET N-CHANNEL 900V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH