
SIHFBF30S-GE3 Vishay Siliconix

Description: MOSFET N-CHANNEL 900V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
6+ | 3.27 EUR |
10+ | 2.37 EUR |
100+ | 1.78 EUR |
500+ | 1.43 EUR |
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Technische Details SIHFBF30S-GE3 Vishay Siliconix
Description: MOSFET N-CHANNEL 900V, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V.
Weitere Produktangebote SIHFBF30S-GE3 nach Preis ab 1.49 EUR bis 3.33 EUR
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SIHFBF30S-GE3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 805 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHFBF30S-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 2.3A; Idm: 14A; 125W Case: D2PAK; TO263 Drain-source voltage: 900V Drain current: 2.3A On-state resistance: 3.7Ω Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: tube Gate charge: 78nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 14A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHFBF30S-GE3 | Hersteller : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 100V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V |
Produkt ist nicht verfügbar |
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SIHFBF30S-GE3 | Hersteller : VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 900V; 2.3A; Idm: 14A; 125W Case: D2PAK; TO263 Drain-source voltage: 900V Drain current: 2.3A On-state resistance: 3.7Ω Type of transistor: N-MOSFET Power dissipation: 125W Polarisation: unipolar Kind of package: tube Gate charge: 78nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 14A Mounting: SMD |
Produkt ist nicht verfügbar |