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SIHFL110TR-GE3

SIHFL110TR-GE3 Vishay Siliconix

sihfl110.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
25+0.71 EUR
100+0.50 EUR
500+0.43 EUR
1000+0.38 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIHFL110TR-GE3 Vishay Siliconix

Description: MOSFET N-CH 100V 1.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V.

Weitere Produktangebote SIHFL110TR-GE3 nach Preis ab 0.37 EUR bis 1.12 EUR

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SIHFL110TR-GE3 SIHFL110TR-GE3 Hersteller : Vishay / Siliconix sihfl110.pdf MOSFETs 100V Vds 20V Vgs SOT-223
auf Bestellung 4438 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.12 EUR
10+0.75 EUR
100+0.53 EUR
500+0.46 EUR
1000+0.41 EUR
2500+0.37 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHFL110TR-GE3 SIHFL110TR-GE3 Hersteller : Vishay sihfl110.pdf Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHFL110TR-GE3 SIHFL110TR-GE3 Hersteller : Vishay Siliconix sihfl110.pdf Description: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH