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SIHFL210TR-GE3

SIHFL210TR-GE3 Vishay / Siliconix


sihfl210.pdf Hersteller: Vishay / Siliconix
MOSFETs SOT223 200V .96A N-CH MOSFET
auf Bestellung 2375 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.11 EUR
10+0.78 EUR
100+0.54 EUR
2500+0.31 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SIHFL210TR-GE3 Vishay / Siliconix

Description: MOSFET N-CHANNEL 200V, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 960mA (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V.

Weitere Produktangebote SIHFL210TR-GE3 nach Preis ab 0.53 EUR bis 1.14 EUR

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SIHFL210TR-GE3 SIHFL210TR-GE3 Hersteller : Vishay Siliconix sihfl210.pdf Description: MOSFET N-CHANNEL 200V
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
auf Bestellung 378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
23+0.77 EUR
100+0.53 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
SIHFL210TR-GE3 SIHFL210TR-GE3 Hersteller : Vishay sihfl210.pdf Trans MOSFET N-CH 200V 0.96A 4-Pin(3+Tab) SOT-223 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHFL210TR-GE3 SIHFL210TR-GE3 Hersteller : Vishay Siliconix sihfl210.pdf Description: MOSFET N-CHANNEL 200V
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 960mA (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 580mA, 10V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH