auf Bestellung 58471 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.49 EUR |
| 10+ | 1.12 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.54 EUR |
| 2500+ | 0.47 EUR |
| 5000+ | 0.43 EUR |
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Technische Details SIHFL9014TR-GE3 Vishay / Siliconix
Description: MOSFET P-CH 60V 1.8A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V.
Weitere Produktangebote SIHFL9014TR-GE3 nach Preis ab 0.57 EUR bis 1.57 EUR
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SIHFL9014TR-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 60V 1.8A SOT223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
auf Bestellung 3620 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHFL9014TR-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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SIHFL9014TR-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 1.8A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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SIHFL9014TR-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 1.8A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 1.1A, 10V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 25 V |
Produkt ist nicht verfügbar |