auf Bestellung 44 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.45 EUR |
| 10+ | 0.67 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.43 EUR |
| 6000+ | 0.38 EUR |
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Technische Details SIHFR120-GE3 Vishay / Siliconix
Description: MOSFET N-CHANNEL 100V, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Weitere Produktangebote SIHFR120-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHFR120-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CHANNEL 100VPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHFR120-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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| SIHFR120-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Polarisation: unipolar Gate-source voltage: ±20V On-state resistance: 0.27Ω Drain current: 4.9A Kind of channel: enhancement Pulsed drain current: 31A Power dissipation: 42W Drain-source voltage: 100V Gate charge: 16nC Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |