SIHFR120-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CHANNEL 100V
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V
auf Bestellung 1619 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.46 EUR |
| 75+ | 0.84 EUR |
| 150+ | 0.67 EUR |
| 525+ | 0.55 EUR |
| 1050+ | 0.50 EUR |
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Technische Details SIHFR120-GE3 Vishay Siliconix
Description: MOSFET N-CHANNEL 100V, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 4.6A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Weitere Produktangebote SIHFR120-GE3 nach Preis ab 0.40 EUR bis 1.57 EUR
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SIHFR120-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs TO252 100V 7.7A N-CH MOSFET |
auf Bestellung 10486 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHFR120-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK |
Produkt ist nicht verfügbar |
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| SIHFR120-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 31A Drain-source voltage: 100V Drain current: 4.9A On-state resistance: 0.27Ω Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SIHFR120-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 31A Drain-source voltage: 100V Drain current: 4.9A On-state resistance: 0.27Ω |
Produkt ist nicht verfügbar |