SIHFR1N60ATR-GE3 Vishay / Siliconix
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.42 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.61 EUR |
| 2000+ | 0.53 EUR |
| 4000+ | 0.50 EUR |
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Technische Details SIHFR1N60ATR-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 1.4A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V.
Weitere Produktangebote SIHFR1N60ATR-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SIHFR1N60ATR-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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SIHFR1N60ATR-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 1.4A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 7Ohm @ 840mA, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 229 pF @ 25 V |
Produkt ist nicht verfügbar |