Technische Details SIHFR420ATR-GE3 Vishay
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W, Mounting: SMD, Case: DPAK; TO252, Power dissipation: 83W, Kind of package: reel; tape, Polarisation: unipolar, Gate charge: 17nC, Kind of channel: enhanced, Gate-source voltage: ±30V, Pulsed drain current: 10A, On-state resistance: 3Ω, Type of transistor: N-MOSFET, Drain current: 2.1A, Drain-source voltage: 500V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFR420ATR-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHFR420ATR-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W Mounting: SMD Case: DPAK; TO252 Power dissipation: 83W Kind of package: reel; tape Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 10A On-state resistance: 3Ω Type of transistor: N-MOSFET Drain current: 2.1A Drain-source voltage: 500V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHFR420ATR-GE3 | Hersteller : Vishay / Siliconix | MOSFET |
Produkt ist nicht verfügbar |
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SIHFR420ATR-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 2.1A; Idm: 10A; 83W Mounting: SMD Case: DPAK; TO252 Power dissipation: 83W Kind of package: reel; tape Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 10A On-state resistance: 3Ω Type of transistor: N-MOSFET Drain current: 2.1A Drain-source voltage: 500V |
Produkt ist nicht verfügbar |