SIHFR9024TR-GE3 Vishay / Siliconix
auf Bestellung 1881 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.21 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.64 EUR |
| 1000+ | 0.58 EUR |
| 2000+ | 0.51 EUR |
| 4000+ | 0.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHFR9024TR-GE3 Vishay / Siliconix
Description: MOSFET P-CH 60V 8.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V.
Weitere Produktangebote SIHFR9024TR-GE3 nach Preis ab 0.8 EUR bis 1.92 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHFR9024TR-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 60V 8.8A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHFR9024TR-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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SIHFR9024TR-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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SIHFR9024TR-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 8.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V |
Produkt ist nicht verfügbar |
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| SIHFR9024TR-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5.6A; Idm: -35A; 42W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.6A Pulsed drain current: -35A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |