Technische Details SIHFR9110TR-GE3 Vishay Semiconductors
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W, Power dissipation: 25W, Mounting: SMD, Kind of package: reel; tape, Case: DPAK; TO252, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -100V, Pulsed drain current: -12A, Drain current: -2A, Gate charge: 8.7nC, On-state resistance: 1.2Ω, Gate-source voltage: ±20V, Kind of channel: enhancement.
Weitere Produktangebote SIHFR9110TR-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SIHFR9110TR-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W Power dissipation: 25W Mounting: SMD Kind of package: reel; tape Case: DPAK; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -12A Drain current: -2A Gate charge: 8.7nC On-state resistance: 1.2Ω Gate-source voltage: ±20V Kind of channel: enhancement |
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