SIHFR9110TRL-GE3 VISHAY
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Mounting: SMD
Case: DPAK; TO252
Polarisation: unipolar
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 25W
Kind of package: reel; tape
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -100V
Drain current: -2A
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W
Mounting: SMD
Case: DPAK; TO252
Polarisation: unipolar
On-state resistance: 1.2Ω
Type of transistor: P-MOSFET
Power dissipation: 25W
Kind of package: reel; tape
Gate charge: 8.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -12A
Drain-source voltage: -100V
Drain current: -2A
Anzahl je Verpackung: 1 Stücke
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Technische Details SIHFR9110TRL-GE3 VISHAY
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W, Mounting: SMD, Case: DPAK; TO252, Polarisation: unipolar, On-state resistance: 1.2Ω, Type of transistor: P-MOSFET, Power dissipation: 25W, Kind of package: reel; tape, Gate charge: 8.7nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: -12A, Drain-source voltage: -100V, Drain current: -2A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SIHFR9110TRL-GE3
Foto | Bezeichnung | Hersteller | Beschreibung |
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SIHFR9110TRL-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -2A; Idm: -12A; 25W Mounting: SMD Case: DPAK; TO252 Polarisation: unipolar On-state resistance: 1.2Ω Type of transistor: P-MOSFET Power dissipation: 25W Kind of package: reel; tape Gate charge: 8.7nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -12A Drain-source voltage: -100V Drain current: -2A |
Produkt ist nicht verfügbar |