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SIHFRC20TR-GE3

SIHFRC20TR-GE3 Vishay / Siliconix


sihfrc20.pdf Hersteller: Vishay / Siliconix
MOSFETs TO252 600V 2A N-CH MOSFET
auf Bestellung 3869 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.92 EUR
10+1.27 EUR
100+0.84 EUR
500+0.66 EUR
1000+0.6 EUR
2000+0.55 EUR
4000+0.47 EUR
Mindestbestellmenge: 2
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Technische Details SIHFRC20TR-GE3 Vishay / Siliconix

Description: MOSFET N-CHANNEL 600V, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Tc), Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V.

Weitere Produktangebote SIHFRC20TR-GE3 nach Preis ab 0.59 EUR bis 1.92 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SIHFRC20TR-GE3 SIHFRC20TR-GE3 Hersteller : Vishay Siliconix sihfrc20.pdf Description: MOSFET N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 1458 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
14+1.26 EUR
100+0.83 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SIHFRC20TR-GE3 Hersteller : VISHAY sihfrc20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhancement
Drain current: 1.3A
On-state resistance: 4.4Ω
Pulsed drain current: 8A
Gate-source voltage: ±20V
Case: DPAK; TO252
Power dissipation: 42W
Mounting: SMD
Drain-source voltage: 600V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHFRC20TR-GE3 SIHFRC20TR-GE3 Hersteller : Vishay Siliconix sihfrc20.pdf Description: MOSFET N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SIHFRC20TR-GE3 Hersteller : VISHAY sihfrc20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.3A; Idm: 8A; 42W; DPAK,TO252
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 18nC
Kind of channel: enhancement
Drain current: 1.3A
On-state resistance: 4.4Ω
Pulsed drain current: 8A
Gate-source voltage: ±20V
Case: DPAK; TO252
Power dissipation: 42W
Mounting: SMD
Drain-source voltage: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH