auf Bestellung 2709 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.58 EUR |
| 10+ | 1.22 EUR |
| 100+ | 0.83 EUR |
| 500+ | 0.7 EUR |
| 1000+ | 0.63 EUR |
| 3000+ | 0.54 EUR |
| 6000+ | 0.5 EUR |
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Technische Details SIHFU024-GE3 Vishay / Siliconix
Description: LOGIC MOSFET N-CHANNEL 60V, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V.
Weitere Produktangebote SIHFU024-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SIHFU024-GE3 | Hersteller : VISHAY |
 SIHFU024-GE3 THT N channel transistors |
Produkt ist nicht verfügbar |
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SIHFU024-GE3 | Hersteller : Vishay Siliconix |
Description: LOGIC MOSFET N-CHANNEL 60V Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
Produkt ist nicht verfügbar |