| Anzahl | Preis |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 1.5 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.71 EUR |
| 3000+ | 0.6 EUR |
| 6000+ | 0.54 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHFU024-GE3 Vishay / Siliconix
Description: LOGIC MOSFET N-CHANNEL 60V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-251AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Weitere Produktangebote SIHFU024-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SIHFU024-GE3 | Vishay Siliconix |
 Description: LOGIC MOSFET N-CHANNEL 60VInput Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SIHFU024-GE3 |
|
Hersteller: Vishay Siliconix
Description: LOGIC MOSFET N-CHANNEL 60V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: LOGIC MOSFET N-CHANNEL 60V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH