SIHFU9220-GE3 Vishay / Siliconix
| Anzahl | Preis |
|---|---|
| 4+ | 0.91 EUR |
| 10+ | 0.69 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.57 EUR |
| 3000+ | 0.54 EUR |
| 6000+ | 0.53 EUR |
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Technische Details SIHFU9220-GE3 Vishay / Siliconix
Description: MOSFET P-CH 200V 3.6A TO251AA, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-251AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.
Weitere Produktangebote SIHFU9220-GE3 nach Preis ab 0.6 EUR bis 0.92 EUR
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SIHFU9220-GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 200V 3.6A TO251AAInput Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-251AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHFU9220-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 3.6A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET P-CH 200V 3.6A TO251AA
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |
| 26+ | 0.7 EUR |
| 100+ | 0.6 EUR |