SIHG018N60E-GE3 Vishay Semiconductors
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.37 EUR |
| 10+ | 21.85 EUR |
| 100+ | 20.4 EUR |
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Technische Details SIHG018N60E-GE3 Vishay Semiconductors
Description: MOSFET N-CH 600V 99A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 99A (Tc), Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V, Power Dissipation (Max): 524W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7612 pF @ 100 V.
Weitere Produktangebote SIHG018N60E-GE3 nach Preis ab 17.91 EUR bis 35.02 EUR
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SIHG018N60E-GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 600V 99A TO247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 99A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V Power Dissipation (Max): 524W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7612 pF @ 100 V |
auf Bestellung 704 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHG018N60E-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 99A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 524W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7612 pF @ 100 V
Description: MOSFET N-CH 600V 99A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 99A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 25A, 10V
Power Dissipation (Max): 524W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 228 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7612 pF @ 100 V
auf Bestellung 704 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 35.02 EUR |
| 25+ | 22.25 EUR |
| 100+ | 19.22 EUR |
| 500+ | 17.91 EUR |