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Technische Details SIHG100N60E-GE3 Vishay
Description: MOSFET N-CH 600V 30A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V, Power Dissipation (Max): 208W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V.
Weitere Produktangebote SIHG100N60E-GE3 nach Preis ab 4.65 EUR bis 13.91 EUR
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SIHG100N60E-GE3 | Vishay |
 Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AC |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG100N60E-GE3 | Vishay / Siliconix |
MOSFETs 650V Vds; 30V Vgs TO-247AC |
auf Bestellung 503 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG100N60E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 30A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V |
auf Bestellung 359 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIHG100N60E-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AC
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-247AC
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 500+ | 4.65 EUR |
| SIHG100N60E-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds; 30V Vgs TO-247AC
MOSFETs 650V Vds; 30V Vgs TO-247AC
auf Bestellung 503 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.59 EUR |
| 10+ | 7 EUR |
| 100+ | 5.65 EUR |
| 500+ | 5.43 EUR |
| 1000+ | 5.18 EUR |
| SIHG100N60E-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
Description: MOSFET N-CH 600V 30A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1851 pF @ 100 V
auf Bestellung 359 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.91 EUR |
| 10+ | 9.39 EUR |
| 100+ | 6.84 EUR |