auf Bestellung 461 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.09 EUR |
| 10+ | 5.26 EUR |
| 25+ | 4.15 EUR |
| 100+ | 4.01 EUR |
| 250+ | 3.75 EUR |
| 500+ | 3.27 EUR |
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Technische Details SIHG11N80E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 800V 12A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V.
Weitere Produktangebote SIHG11N80E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SIHG11N80E-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 800V 12A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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| SIHG11N80E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 88nC Pulsed drain current: 32A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHG11N80E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 800V 12A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V |
Produkt ist nicht verfügbar |
|
| SIHG11N80E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 440mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 88nC Pulsed drain current: 32A |
Produkt ist nicht verfügbar |