SIHG120N60E-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 600V 25A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.41 EUR |
| 50+ | 4.74 EUR |
| 100+ | 4.54 EUR |
| 500+ | 3.79 EUR |
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Technische Details SIHG120N60E-GE3 Vishay Siliconix
Description: MOSFET N-CH 600V 25A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-247AC, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 100 V.
Weitere Produktangebote SIHG120N60E-GE3 nach Preis ab 4.08 EUR bis 8.8 EUR
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SIHG120N60E-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 650V Vds; 30V Vgs TO-247AC |
auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG120N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247AC |
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SIHG120N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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SIHG120N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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| SIHG120N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 66A |
Produkt ist nicht verfügbar |