auf Bestellung 1072 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.82 EUR |
| 10+ | 3.66 EUR |
| 100+ | 3.41 EUR |
| 500+ | 3.13 EUR |
| 1000+ | 2.76 EUR |
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Technische Details SIHG15N60E-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 15A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V.
Weitere Produktangebote SIHG15N60E-GE3 nach Preis ab 3.06 EUR bis 4.72 EUR
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SIHG15N60E-GE3 | Hersteller : VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 204 Stücke: Lieferzeit 7-14 Tag (e) |
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SIHG15N60E-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHG15N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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SIHG15N60E-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 600V 15A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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SIHG15N60E-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 15A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V |
Produkt ist nicht verfügbar |