SIHG15N60E-GE3 VISHAY
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Preis |
|---|---|
| 17+ | 4.4 EUR |
| 20+ | 3.76 EUR |
| 22+ | 3.35 EUR |
| 25+ | 2.95 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SIHG15N60E-GE3 VISHAY
Description: MOSFET N-CH 600V 15A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V.
Weitere Produktangebote SIHG15N60E-GE3 nach Preis ab 2.83 EUR bis 7.29 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIHG15N60E-GE3 | Vishay / Siliconix |
MOSFETs 600V Vds 30V Vgs TO-247AC |
auf Bestellung 370 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIHG15N60E-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-247AC
MOSFETs 600V Vds 30V Vgs TO-247AC
auf Bestellung 370 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.29 EUR |
| 10+ | 4.79 EUR |
| 100+ | 3.56 EUR |
| 500+ | 2.83 EUR |