| Anzahl | Preis |
|---|---|
| 1+ | 4.61 EUR |
| 10+ | 3.03 EUR |
| 100+ | 2.82 EUR |
| 500+ | 2.78 EUR |
| 1000+ | 2.15 EUR |
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Technische Details SIHG15N80AEF-GE3 Vishay
Description: EF SERIES POWER MOSFET WITH FAST, Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247AC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 156W (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote SIHG15N80AEF-GE3 nach Preis ab 2.79 EUR bis 4.66 EUR
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SIHG15N80AEF-GE3 | Vishay Siliconix |
 Description: EF SERIES POWER MOSFET WITH FASTInput Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247AC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SIHG15N80AEF-GE3 |
|
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: EF SERIES POWER MOSFET WITH FAST
Input Capacitance (Ciss) (Max) @ Vds: 1128 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.66 EUR |
| 25+ | 2.99 EUR |
| 100+ | 2.79 EUR |