| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.53 EUR |
| 10+ | 6.91 EUR |
| 100+ | 5.09 EUR |
| 500+ | 4.32 EUR |
| 1000+ | 4.11 EUR |
| 2500+ | 4.06 EUR |
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Technische Details SIHG190N65E-GE3 Vishay
Description: N-CHANNEL 650V, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Supplier Device Package: TO-247AC, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 100 V.
Weitere Produktangebote SIHG190N65E-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
SIHG190N65E-GE3 | Vishay Siliconix |
 Description: N-CHANNEL 650VPackaging: Tape & Reel (TR) Package / Case: TO-247-3 Mounting Type: Through Hole Supplier Device Package: TO-247AC Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIHG190N65E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SIHG190N65E-GE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 100 V
Description: N-CHANNEL 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SIHG190N65E-GE3 |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH