auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.90 EUR |
| 10+ | 5.14 EUR |
| 25+ | 4.56 EUR |
| 100+ | 3.96 EUR |
| 250+ | 3.64 EUR |
| 500+ | 3.45 EUR |
| 1000+ | 3.29 EUR |
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Technische Details SIHG22N60AE-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 20A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V.
Weitere Produktangebote SIHG22N60AE-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SIHG22N60AE-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 600V 20A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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| SIHG22N60AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 49A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHG22N60AE-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 20A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 11A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1451 pF @ 100 V |
Produkt ist nicht verfügbar |
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| SIHG22N60AE-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 49A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 49A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |