SIHG47N60EF-GE3 Vishay / Siliconix
auf Bestellung 276 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 23.14 EUR |
10+ | 19.84 EUR |
25+ | 17.99 EUR |
100+ | 16.43 EUR |
250+ | 15.57 EUR |
500+ | 14.43 EUR |
1000+ | 13.86 EUR |
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Technische Details SIHG47N60EF-GE3 Vishay / Siliconix
Description: MOSFET N-CH 600V 47A TO247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 47A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V, Power Dissipation (Max): 379W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-247AC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4854 pF @ 100 V.
Weitere Produktangebote SIHG47N60EF-GE3 nach Preis ab 16.64 EUR bis 23.3 EUR
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SIHG47N60EF-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 600V 47A TO247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 24A, 10V Power Dissipation (Max): 379W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247AC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4854 pF @ 100 V |
auf Bestellung 468 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHG47N60EF-GE3 Produktcode: 163480 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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SIHG47N60EF-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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SIHG47N60EF-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-247AC |
Produkt ist nicht verfügbar |
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SIHG47N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 138A; 379W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29A Pulsed drain current: 138A Power dissipation: 379W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SIHG47N60EF-GE3 | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29A; Idm: 138A; 379W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 29A Pulsed drain current: 138A Power dissipation: 379W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 228nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |