SIHH100N65E-T1-GE3 Vishay

Description: E SERIES POWER MOSFET 650 V (D-, Input Capacitance (Ciss) (Max) @ Vds: 2137 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 184W (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).