| Anzahl | Preis |
|---|---|
| 1+ | 10.84 EUR |
| 10+ | 7.25 EUR |
| 100+ | 5.68 EUR |
| 500+ | 5.65 EUR |
| 1000+ | 5.33 EUR |
| 3000+ | 4.21 EUR |
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Technische Details SIHH105N60EF-T1GE3 Vishay Semiconductors
Description: EF SERIES POWER MOSFET WITH FAST, Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK® 8 x 8, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 174W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote SIHH105N60EF-T1GE3 nach Preis ab 5.74 EUR bis 11.21 EUR
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SIHH105N60EF-T1GE3 | Vishay Siliconix |
 Description: EF SERIES POWER MOSFET WITH FASTDrain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® 8 x 8 Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 174W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V |
auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHH105N60EF-T1GE3 |
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Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Description: EF SERIES POWER MOSFET WITH FAST
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® 8 x 8
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 174W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2099 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
auf Bestellung 2960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 11.21 EUR |
| 10+ | 7.6 EUR |
| 100+ | 5.74 EUR |